SPIN-FLIP RAMAN SCATTERING IN SEMIMAGNETIC SEMICONDUCTORSWALUKIEWICZ W.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 8; PP. 3957-3967; BIBL. 26 REF.Article

ELECTRON MOBILITY AND THERMOELECTRIC POWER IN PURE MERCURY TELLURIDE.WALUKIEWICZ W.1976; J. PHYS. C; G.B.; DA. 1976; VOL. 9; NO 10; PP. 1945-1954; BIBL. 25 REF.Article

RESONANT SCATTERING OF ELECTRONS IN MERCURY TELLURIDE.WALUKIEWICZ W.1974; PHYS. REV. LETTERS; U.S.A.; DA. 1974; VOL. 33; NO 11; PP. 640-652; BIBL. 9 REF.Article

Acoustic-phonon scattering in modulation-doped heterostructuresWALUKIEWICZ, W.Physical review. B, Condensed matter. 1988, Vol 37, Num 14, pp 8530-8533, issn 0163-1829Article

Carrier scattering by native defects in heavily doped semiconductorsWALUKIEWICZ, W.Physical review. B, Condensed matter. 1990, Vol 41, Num 14, pp 10218-10220, issn 0163-1829, 3 p.Article

Hole-scattering mechanisms in modulation-doped heterostructuresWALUKIEWICZ, W.Journal of applied physics. 1986, Vol 59, Num 10, pp 3577-3579, issn 0021-8979Article

THE LONGITUDINAL MAGNETOPHONON EFFECT IN SEMICONDUCTORS CONTAINING MAGNETIC IMPURITIES.KOSSUT J; WALUKIEWICZ W.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 3; PP. 343-345; BIBL. 8 REF.Article

Amphoteric native defects in semiconductorsWALUKIEWICZ, W.Applied physics letters. 1989, Vol 54, Num 21, pp 2094-2096, issn 0003-6951Article

Mechanism of Fermi-level stabilization in semiconductorsWALUKIEWICZ, W.Physical review. B, Condensed matter. 1988, Vol 37, Num 9, pp 4760-4763, issn 0163-1829Article

Hole mobility in modulation-doped heterostructures: GaAs-AlGaAsWALUKIEWICZ, W.Physical review. B, Condensed matter. 1985, Vol 31, Num 8, pp 5557-5560, issn 0163-1829Article

Dislocation density reduction by isoelectronic impurities in semiconductorsWALUKIEWICZ, W.Applied physics letters. 1989, Vol 54, Num 20, pp 2009-2011, issn 0003-6951, 3 p.Article

SHALLOW-ACCEPTOR CONTRIBUTION TO THE NEAR-RESONANCE SPIN-FLIP RAMAN SCATTERING IN SEMICONDUCTORSWALUKIEWICZ W; AGGARWAL RL; STOELINGA JHM et al.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 12; PP. 6350-6357; BIBL. 15 REF.Article

ELECTRON MOBILITY IN N-TYPE GAAS AT 77 K; DETERMINATION OF THE COMPENSATION RATIOWALUKIEWICZ W; LAGOWSKI J; GATOS HC et al.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 1; PP. 769-770; BIBL. 4 REF.Article

REASSESSMENT OF SPACE-CHARGE AND CENTRAL-CELL SCATTERING CONTRIBUTIONS TO GAAS ELECTRON MOBILITYWALUKIEWICZ W; LAGOWSKI J; GATOS HC et al.1981; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1981; VOL. 52; NO 9; PP. 5853-5854; BIBL. 14 REF.Article

DERIVATIVE SURFACE PHOTOVOLTAGE SPECTROSCOPY; A NEW APPROACH TO THE STUDY OF ABSORPTION IN SEMICONDUCTORS: GAASLAGOWSKI J; WALUKIEWICZ W; SLUSARCZUK MMG et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 5059-5061; BIBL. 17 REF.Article

MINORITY-CARRIER MOBILITY IN P-TYPE GAASWALUKIEWICZ W; LAGOWSKI J; JASTRZEBSKI L et al.1979; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1979; VOL. 50; NO 7; PP. 5040-5042; BIBL. 11 REF.Article

ELECTRON MOBILITY AND FREE-CARRIER ABSORPTION IN GAAS: DETERMINATION OF THE COMPENSATION RATIOWALUKIEWICZ W; LAGOWSKI L; JASTRZEBSKI L et al.1979; J. APPL. PHYS.; USA; DA. 1979; VOL. 50; NO 2; PP. 899-909; BIBL. 38 REF.Article

Effect of scattering by native defects on electron mobility in modulation-doped heterostructuresWALUKIEWICZ, W; HALLER, E. E.Applied physics letters. 1991, Vol 58, Num 15, pp 1638-1640, issn 0003-6951, 3 p.Article

MAGNETO-OPTICAL STUDY OF SHALLOW DONORS IN TRANSMUTATION-DOPED GAASSTOELINGA JHM; LARSEN DM; WALUKIEWICZ W et al.1978; J. PHYS. CHEM. SOLIDS; GBR; DA. 1978; VOL. 39; NO 8; PP. 873-877; BIBL. 16 REF.Article

GAAS-OXIDE INTERFACE STATES: A GIGANTIC PHOTOIONIZATION EFFECT AND ITS IMPLICATIONS TO THE ORIGIN OF THESE STATESLAGOWSKI J; WALUKIEWICZ W; KAZIOR TE et al.1981; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1981; VOL. 39; NO 3; PP. 240-242; BIBL. 17 REF.Article

The effects of synchrotron x-rays on the local structure and the recrystallization of ion damaged SiKIN MAN YU; WANG, L; WALUKIEWICZ, W et al.Semiconductor science and technology. 1997, Vol 12, Num 4, pp 460-463, issn 0268-1242Article

Deep-level defects in silicon and the band-edge hydrostatic deformation potentialsNOLTE, D. D; WALUKIEWICZ, W; HALLER, E. E et al.Physical review. B, Condensed matter. 1987, Vol 36, Num 17, pp 9392-9394, issn 0163-1829Article

Shallow donor associated with the main electron trap (EL2) in melt-grown GaAsWALUKIEWICZ, W; LAGOWSKI, J; GATOS, H. C et al.Applied physics letters. 1983, Vol 43, Num 1, pp 112-114, issn 0003-6951Article

Antiferromagnetic ordering of defects in GaAsBORNEMANN, H. J; WALUKIEWICZ, W; BLISS, D. E et al.Physical review. B, Condensed matter. 1992, Vol 46, Num 15, pp 9849-9852, issn 0163-1829Article

ELECTRON MOBILITY AND FREE-CARRIER ABSORPTION IN INP; DETERMINATION OF THE COMPENSATION RATIOWALUKIEWICZ W; LAGOWSKI J; JASTRZEBSKI L et al.1980; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1980; VOL. 51; NO 5; PP. 2659-2668; BIBL. 30 REF.Article